Method for engineering the threshold voltage of a device using buried wells
US6489224B1 · kind B1 · utility
Assignee
Inventor
Key dates
| Filing date | May 31, 2001 |
| Grant date | Dec 3, 2002 |
| Priority date | — |
| Expiry date | May 31, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/0191
Abstract
Buried platform wells are specifically used to electrically interact with the platform transistors of the invention. The dopant concentration distribution of the buried platform wells is used to change the threshold voltage of the platform transistors of the invention by introducing a tail dopant concentration into the active region of the platform transistors. The platform transistors of the invention can also be used in conjunction with standard transistors, on a single structure, to provide both low and relatively high threshold voltage transistors on a single structure. Consequently, using the method and structure of the invention, considerable versatility and design flexibility are achieved with minimum additional structural complexity.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.