Method to reduce photoresist contamination from silicon carbide films
US6489238B1 · kind B1 · utility
16Cited by
4References
12Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Aug 21, 2001 |
| Grant date | Dec 3, 2002 |
| Priority date | — |
| Expiry date | Aug 21, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/31144
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Silicon carbide layers are often used as hardmask layers in semiconductor processing. The photoresist used to pattern the silicon carbide layers during the hardmask patterning process can become poisoned by the silicon carbide layer and remain attached to the silicon carbide surface. According to the method of the instant invention a trimethylsilane and oxygen treatment of the silicon carbide growth chamber prior to layer growth will reduce the photoresist poisoning.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.