Ting Tsui
28Patents
10h-index
34Co-inventors
71Inventor score
Filing activity: Aug 10, 1998 → Sep 23, 2008
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6339958B1 | Adhesion strength testing using a depth-sensing indentation technique | Physics | 33 | Expired |
| US6242790A | Using polysilicon fuse for IC programming | Electricity | 31 | Expired |
| US6489238B1 | Method to reduce photoresist contamination from silicon carbide films | Electricity | 16 | Expired |
| US6208030A | Semiconductor device having a low dielectric constant material | Electricity | 16 | Expired |
| US6780756B1 | Etch back of interconnect dielectrics | Electricity | 15 | Expired |
| US6023327A | System and method for detecting defects in an interlayer dielectric of a semiconductor device | Electricity | 15 | Expired |
| US6498112B1 | Graded oxide caps on low dielectric constant (low K) chemical vapor deposition (CVD) films | Electricity | 14 | Expired |
| US6053034A | Method for measuring fracture toughness of thin films | Emerging Cross-Sectional Technologies | 14 | Expired |
| US7442597B2 | Systems and methods that selectively modify liner induced stress | Electricity | 12 | Expired |
| US6309942A | STI punch-through defects and stress reduction by high temperature oxide reflow process | Electricity | 11 | Expired |
| US6147507A | System and method of mapping leakage current and a defect profile of a semiconductor dielectric layer | Emerging Cross-Sectional Technologies | 9 | Expired |
| US6583070B1 | Semiconductor device having a low dielectric constant material | Electricity | 9 | Expired |
| US6881665B1 | Depth of focus (DOF) for trench-first-via-last (TFVL) damascene processing with hard mask and low viscosity photoresist | Electricity | 7 | Expired |
| US6177802A | System and method for detecting defects in an interlayer dielectric of a semiconductor device using the hall-effect | Electricity | 5 | Expired |
| US7268073B2 | Post-polish treatment for inhibiting copper corrosion | Electricity | 5 | Expired |
| US6607945B2 | Laser-assisted silicide fuse programming | Electricity | 4 | Expired |
| US6320403A | Method of determining the doping concentration and defect profile across a surface of a processed semiconductor material | Emerging Cross-Sectional Technologies | 3 | Expired |
| US7678713B2 | Energy beam treatment to improve packaging reliability | Electricity | 3 | Active |
| US7282436B2 | Plasma treatment for silicon-based dielectrics | Electricity | 2 | Expired |
| US6407558B2 | Method of determining the doping concentration across a surface of a semiconductor material | Emerging Cross-Sectional Technologies | 2 | Expired |
| US6208154A | Method of determining the doping concentration across a surface of a semiconductor material | Emerging Cross-Sectional Technologies | 1 | Expired |
| US7341941B2 | Methods to facilitate etch uniformity and selectivity | Electricity | 1 | Expired |
| US7342315B2 | Method to increase mechanical fracture robustness of porous low k dielectric materials | Electricity | 1 | Expired |
| US7087518B2 | Method of passivating and/or removing contaminants on a low-k dielectric/copper surface | Electricity | 0 | Expired |
| US7939400B2 | Systems and methods that selectively modify liner induced stress | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.