Method and apparatus for etch passivating and etching a substrate
US6489248B2 · kind B2 · utility
15Cited by
35References
57Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 23, 2001 |
| Grant date | Dec 3, 2002 |
| Priority date | — |
| Expiry date | Aug 23, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/67069
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A substrate having a patterned mask and exposed openings is provided in a process chamber having process electrodes. In a plasma ignition stage, a process gas is provided in the process chamber and is energized by maintaining the process electrodes at a plasma ignition bias power level. In an etch-passivating stage, an etch-passivating material is formed on at least portions of the substrate by maintaining the process electrodes at an etch-passivating bias power level. In an etching stage, the exposed openings on the substrate are etched by maintaining the process electrodes at an etching bias power level.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.