Method for cutting group III nitride semiconductor light emitting element
US6489250B1 · kind B1 · utility
16Cited by
4References
3Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 21, 2000 |
| Grant date | Dec 3, 2002 |
| Priority date | — |
| Expiry date | Nov 21, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/78
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for cutting Group III nitride semiconductor light emitting element comprises the step of discharge-etched on a front face of a chip or cutting channel of a substrate; and breaking on a back surface of the discharge-etching face to be formed with dies. This method is different from the prior art dicing saw and point scribe. Thus, the cutting time is shortened. The consumption of the diamond knife from cutting is reduced. The yield ratio of dies is improved and the outlook is also improved.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.