Method of forming pre-metal dielectric film on a semiconductor substrate including first layer of undoped oxide of high ozone:TEOS volume ratio and second layer of low ozone doped BPSG
US6489254B1 · kind B1 · utility
15Cited by
14References
17Claims
0Family size
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Key dates
| Filing date | Aug 29, 2000 |
| Grant date | Dec 3, 2002 |
| Priority date | — |
| Expiry date | Oct 3, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/31051
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of forming a pre-metal dielectric film having good as deposited gapfill characteristics, as well as good mobile-ion gettering capability. The method involves first depositing a layer of high-ozone undoped silicon dioxide film having a high ozone/TEOS volume ratio. Then, a low-ozone doped BPSG film is deposited over the high-ozone undoped silicon dioxide layer. The film layers are heat treated to densify the film, and then the top layer is planarized using known planarization techniques to a thickness that allows for adequate mobile-ion gettering.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.