Inventor · Flower Mound, TX, US

Amit S. Kelkar

21Patents
5h-index
27Co-inventors
65Inventor score

Filing activity: Jun 1, 2000 → Sep 29, 2016

Most-cited inventions

PatentTitleAreaCited byStatus
US6291367A Method for depositing a selected thickness of an interlevel dielectric material to achieve optimum global planarity on a semiconductor wafer Electricity 36 Expired
US6489254B1 Method of forming pre-metal dielectric film on a semiconductor substrate including first layer of undoped oxide of high ozone:TEOS volume ratio and second layer of low ozone doped BPSG Electricity 15 Expired
US9324687B1 Wafer-level passive device integration Electricity 15 Active
US9190391B2 Three-dimensional chip-to-wafer integration Electricity 12 Active
US9000587B1 Wafer-level thin chip integration Electricity 9 Active
US9704809B2 Fan-out and heterogeneous packaging of electronic components Electricity 5 Active
US10134689B1 Warpage compensation metal for wafer level packaging technology Electricity 3 Active
US6828212B2 Method of forming shallow trench isolation structure in a semiconductor device Electricity 3 Expired
US6824687B2 Extraction of phenol from wastewater Emerging Cross-Sectional Technologies 2 Expired
US9331048B2 Bonded stacked wafers and methods of electroplating bonded stacked wafers Electricity 1 Active
US8124916B2 Thermal processing of silicon wafers Electricity 1 Active
US6495475B2 Method for fabrication of a high capacitance interpoly dielectric Electricity 1 Expired
US8860222B2 Techniques for wafer-level processing of QFN packages Electricity 1 Active
US8878350B1 Semiconductor device having a buffer material and stiffener Electricity 1 Active
US10032749B2 Three-dimensional chip-to-wafer integration Electricity 0 Active
US6709990B2 Method for fabrication of a high capacitance interpoly dielectric Electricity 0 Expired
US8970043B2 Bonded stacked wafers and methods of electroplating bonded stacked wafers Electricity 0 Active
US9472451B2 Technique for wafer-level processing of QFN packages Electricity 0 Active
USRE40507E1 Method of forming pre-metal dielectric film on a semiconductor substrate including first layer of undoped oxide of high ozone:TEOS volume ratio and second layer of low ozone doped BPSG General 0 Expired
US9040386B2 Method for varied topographic MEMS cap process Performing Operations; Transporting 0 Active
US9219043B2 Wafer-level package device having high-standoff peripheral solder bumps Electricity 0 Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.