Apparatus for decelerating ion beams with minimal energy contamination
US6489622B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 1, 2000 |
| Grant date | Dec 3, 2002 |
| Priority date | — |
| Expiry date | Mar 1, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/057
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
An ion implantation apparatus is disclosed in this invention. The ion implantation apparatus includes a target chamber for containing a target for implantation and an ion source chamber includes an ion source with a mass filter for generating an ion beam with certain mass and original energy. The ion source chamber further includes beam deceleration optics for decelerating the ion beam from the original energy to the desired final energy. The ion beam apparatus is able to accurately direct low energy ions to a target wafer. The beam deceleration optics further includes a plurality of electrodes for generating an electric field for spreading the charged ion beam over an angular range to accurately control the trajectory paths of ions of different energy levels. The purpose is to eliminate the energy contamination by more accurately controlling the energy range of the charged ions that reach the target for implantation and to block the neutralized particle and ions of higher energy from reaching the target for implantation.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.