Semiconductor device
US6489648B2 · kind B2 · utility
22Cited by
1References
2Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 30, 2001 |
| Grant date | Dec 3, 2002 |
| Priority date | — |
| Expiry date | Aug 30, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/688
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device has a gate dielectric film formed of zirconium oxide or hafnium oxide as a chief material and a gate electrode film in contact with the gate dielectric film on one principal surface side of a silicon substrate. The gate dielectric film contains an addition element to prevent diffusion of oxygen.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.