Reduction of electromigration in dual damascene connector
US6489684B1 · kind B1 · utility
29Cited by
6References
18Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 14, 2001 |
| Grant date | Dec 3, 2002 |
| Priority date | — |
| Expiry date | May 14, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
As current densities through wiring in integrated circuits increases, so too do failures due to electromigration. Such failure almost always occur in vias located at the ends of long lines. The present invention solves this problem by introducing, as part of the wiring, local back-diffusion sources that serve to increase back pressure on the metallic ions that makes up the wire, thereby reversing the trend towards electromigration. These sources are located close to the vias in question and may take the form of discrete local areas where the wiring is wider or they may be introduced in the form of dummy vias.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.