Patent · US Expired

In-situ air oxidation treatment of MOCVD process effluent

US6491884B1 · kind B1 · utility

19Cited by
21References
26Claims
0Family size

Assignee

Inventors

Key dates

Filing dateNov 21, 2000
Grant dateDec 10, 2002
Priority date
Expiry dateNov 21, 2020

Classification

  • Technology area (CPC B)Performing Operations; Transporting
  • CPC primaryB01D2259/402
  • WIPO fieldChemical engineering
  • WIPO sectorChemistry

Abstract

An effluent abatement system for abating hydride species in a hydride-containing effluent, arranged for carrying out the steps of: (1) contacting the hydride-containing effluent with a dry scrubber material comprising a metal oxide that is reactive with the hydride species to remove the hydride species from the effluent, until the capacity of the dry scrubber material for hydride species is at least partially exhausted; and (2) contacting the at least partially exhausted capacity dry scrubber material with an oxidant to at least partially regain the capacity of the dry scrubber material for the hydride species. The system of the invention has particular utility in the treatment of effluent from III-V compound semiconductor manufacturing operations.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.