Semiconductor device and method of fabrication thereof
US6492203B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 5, 2000 |
| Grant date | Dec 10, 2002 |
| Priority date | — |
| Expiry date | Oct 5, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/117
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device fabrication process comprising an encapsulation step of carrying out encapsulation by vacuum pressure differential printing by the use of a liquid resin encapsulant containing a solvent in an amount of from 5% by weight to 50% by weight, and preferably from 25% by weight to 50% by weight. The encapsulation step comprises: printing the liquid resin encapsulant by vacuum pressure differential printing in such a way that; the encapsulant covers at least an internal connecting terminal provided on a substrate, a semiconductor chip, and a wire interconnecting the internal connecting terminal and the semiconductor chip; and that the thickness of the encapsulant lying above the wire at the highest position of the wire comes to be at least 0.8 times the thickness of the encapsulant lying beneath the wire at the same position; and curing or drying the encapsulant.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.