Semiconductor device having reduced field oxide recess and method of fabrication
US6492229B2 · kind B2 · utility
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3References
3Claims
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Key dates
| Filing date | Dec 4, 2000 |
| Grant date | Dec 10, 2002 |
| Priority date | — |
| Expiry date | Dec 4, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B69/00
Abstract
A semiconductor device having reduced field oxide recess and method of fabrication is disclosed. The method of fabricating the semiconductor device begins by performing an HF dip process on a substrate after field oxidation followed by performing a select gate oxidation. Thereafter, a core implant and a field implant are performed. After the implants, a tunnel oxide mask is deposited. The select gate oxide is then etched in areas uncovered by the tunnel oxide mask, and tunnel oxidation is performed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.