Anti reflective coating polymers and the preparation method thereof
US6492441B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 11, 2001 |
| Grant date | Dec 10, 2002 |
| Priority date | — |
| Expiry date | Dec 11, 2021 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/091
- WIPO fieldMacromolecular chemistry, polymers
- WIPO sectorChemistry
Abstract
The present invention relates to organic anti-reflective coating polymers and preparation methods therefor. Anti-reflective coatings are used in a semiconductor device during photolithography processes to prevent the reflection of light from lower layers of the device, or resulting from changes in the thickness of the photoresist layer, and to eliminate the standing wave effect when ArF light is used. The present invention also relates to anti-reflective compositions and coatings containing these organic anti-reflective coating polymers, alone or in combination with certain light-absorbing compounds, and preparation methods therefor. When the polymers of the present invention are used in an anti-reflective coating in a photolithography process for forming submicro-patterns, the resultant elimination of changes in CD due to diffractive and reflective lights originating from lower layers increases the product yield in the formation of submicro-patterns during the manufacture of 64 M, 256 M, 1 G, 4 G and 16 G DRAM semiconductor devices.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.