Hetero-integration of dissimilar semiconductor materials
US6495385B1 · kind B1 · utility
Assignee
Inventor
Key dates
| Filing date | Aug 4, 2000 |
| Grant date | Dec 17, 2002 |
| Priority date | — |
| Expiry date | Nov 24, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02639
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method, structure and article of manufacture related to hetero-integration of dissimilar semiconductor materials. A mask is created on a semiconductor substrate, wherein the mask includes one or more openings, and each of the openings includes one or more overhangs. The overhangs cover a hetero-epitaxial interface region between a film expitaxially grown on the substrate and the substrate itself, thereby preventing a “line-of-sight” view along a surface norm of the substrate in the hetero-epitaxial interface region between the epitaxial film and the substrate. There is only one hetero-epitaxial interface region for each of the openings, which results in only one epitaxial growth front coalescence per opening, thereby reducing the number of highly defective regions from epitaxial growth front coalescence by a factor of two.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.