Method for manufacturing semiconductor pressure sensor having reference pressure chamber
US6495389B2 · kind B2 · utility
27Cited by
5References
7Claims
0Family size
Assignee
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Key dates
| Filing date | Aug 9, 2001 |
| Grant date | Dec 17, 2002 |
| Priority date | — |
| Expiry date | Aug 9, 2021 |
Classification
- Technology area (CPC B)Performing Operations; Transporting
- CPC primaryB81C2201/019
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
In a method for manufacturing a semiconductor pressure sensor, after a reference pressure chamber is formed inside a semiconductor substrate and a diaphragm is formed from a part of the semiconductor substrate, a heat treatment is performed to form an insulation film, an element, or the like on the semiconductor substrate. At that time, a heat treatment temperature is controlled to be lower than (−430P0+1430)° C. where P0 is an internal pressure (atm) of the reference pressure chamber at a room temperature. Accordingly, crystal defects can be prevented from being produced in the diaphragm.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.