Semiconductor device having a ferroelectric capacitor and a fabrication process thereof
US6495412B1 · kind B1 · utility
11Cited by
4References
4Claims
0Family size
Assignee
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Key dates
| Filing date | Sep 10, 1999 |
| Grant date | Dec 17, 2002 |
| Priority date | — |
| Expiry date | Sep 10, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/682
Abstract
A semiconductor device having a ferroelectric capacitor is formed by the steps of forming a lower electrode on a substrate, applying a rapid thermal annealing process to the lower electrode, depositing, after the step of rapid thermal annealing process, a ferroelectric film on the lower electrode, crystallizing the ferroelectric film by applying a thermal annealing process to the ferroelectric film, and forming an upper electrode on the ferroelectric insulation film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.