Semi-sacrificial diamond for air dielectric formation
US6495445B2 · kind B2 · utility
29Cited by
4References
11Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 4, 2001 |
| Grant date | Dec 17, 2002 |
| Priority date | — |
| Expiry date | Apr 4, 2021 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG06Q40/04
- WIPO fieldIT methods for management
- WIPO sectorElectrical engineering
Abstract
Disclosed is a structure and process for incorporating air or other gas as a permanent dielectric medium in a multilevel chip by providing CVD diamond as a semi-sacrificial interlevel and intralevel dielectric material. The semi-sacrificial dielectric is subsequently at least partially removed in an isotropic oxygen etch. A variation of the disclosure includes providing a final, permanent CVD diamond encapsulant to contain the gaseous dielectric medium within the chip.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.