Method for enhancing selectivity between a film of a light-sensitive material and a layer to be etched in electronic semiconductor device fabrication processes
US6495455B2 · kind B2 · utility
2Cited by
7References
8Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 17, 2001 |
| Grant date | Dec 17, 2002 |
| Priority date | — |
| Expiry date | Apr 17, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/32139
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method enhances selectivity between a film of a light-sensitive material and a layer to be subjected to etching in the course of fabrication processes of an electronic semiconductor device starting from a semiconductor material wafer. The method includes radiating the wafer with an ion beam subsequently to depositing the layer to be etched and defining a circuit pattern on the film of light-sensitive material. An alternative method exposes the wafer to a non-reactive gas medium under plasma rather than radiating the wafer with an ion beam.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.