Simplified method to produce nanoporous silicon-based films
US6495479B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | May 5, 2000 |
| Grant date | Dec 17, 2002 |
| Priority date | — |
| Expiry date | May 5, 2020 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/96
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A nanoporous dielectric film useful for the production of semiconductor devices, integrated circuits and the like, is provided, together with processes for producing these improved films. The films are produced by a process that includes (a) preparing a silicon-based, precursor composition including a porogen, (b) coating a substrate with the silicon-based precursor to form a film, (c) aging or condensing the film in the presence of water, (d) heating the gelled film at a temperature and for a duration effective to remove substantially all of said porogen, and wherein the applied precursor composition is substantially aged or condensed in the presence of water in liquid or vapor form, without the application of external heat or exposure to external catalyst.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.