Patent · US Expired

Liquid precursors for aluminum oxide and method making same

US6495709B1 · kind B1 · utility

10Cited by
13References
20Claims
0Family size

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Key dates

Filing dateMar 16, 2000
Grant dateDec 17, 2002
Priority date
Expiry dateMar 16, 2020

Classification

  • Technology area (CPC C)Chemistry; Metallurgy
  • CPC primaryC03C2218/113
  • WIPO fieldOrganic fine chemistry
  • WIPO sectorChemistry

Abstract

A precursor for forming an aluminum oxide film comprises a liquid solution of an aluminum organic precursor compound in an organic solvent. In a second embodiment, the precursor comprises a suspension of aluminum oxide powder in a solution of an aluminum organic precursor compound. A precursor according to the invention is deposited on a substrate by dipping, rolling, spraying, misted deposition, spin on deposition, or chemical vapor deposition then heated to fabricate transparent aluminum oxide films. The electronic properties of the aluminum oxide films may be improved by depositing a plurality of layers of the precursor and annealing the precursor between layers.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.