Patent · US Expired

High-voltage semiconductor component, method for the production and use thereof

US6495864B1 · kind B1 · utility

0Cited by

6References

37Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Dieter Silber · Eschborn, DE
Wolfgang Wondrak · Frankfurt, DE
Robert Plikat · Eningen unter Achalm, DE

Key dates

Filing date	Jan 11, 2001
Grant date	Dec 17, 2002
Priority date	—
Expiry date	Jan 11, 2021

Classification

Technology area (CPC H)Electricity
CPC primaryH10D18/251
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

The invention concerns a semiconductor component with at east one lateral region which is provided to accommodate a lateral electric field strength, whereby the semiconductor body within the body and/or in regions proximal to the surface of the semiconductor body at least over regions thereof has a lateral three-dimensional structure which has vertical recesses in the semiconductor body within which there are electrical conductors which are smaller than in the intervening spaces of the semiconductor body between the recesses, as well as a method for making and of using the semiconductor component.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.