Relaxed InxGa1−xAs buffers
US6495868B2 · kind B2 · utility
3Cited by
5References
18Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 13, 2001 |
| Grant date | Dec 17, 2002 |
| Priority date | — |
| Expiry date | Mar 13, 2021 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S977/712
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
InxGa1−xAs structures with compositionally graded buffers grown with organometallic vapor phase epitaxy (OMPVE) on GaAs substrates. A semiconductor structure and a method of processing such a structure including providing a substrate of GaAs; and epitaxially growing a relaxed graded layer of InxGa1−xAs at a temperature ranging upwards from about 600° C.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.