Photonic device, a substrate for fabricating a photonic device, a method for fabricating the photonic device and a method for manufacturing the photonic device-fabricating substrate
US6495894B2 · kind B2 · utility
39Cited by
4References
15Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 14, 2001 |
| Grant date | Dec 17, 2002 |
| Priority date | — |
| Expiry date | May 14, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/01335
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A buffer layer with a composition of AlaGabIncN (a+b+c=1, a, b, c≧0) and a multilayered thin films with a composition of AlxGayInzN (x+y+z=1, x, y, z≧0) are formed in turn on a substrate. The Al component of the Al component-minimum portion of the buffer layer is set to be larger than that of at least the thickest layer of the multilayered thin films. The Al component of the buffer layer is decreased continuously or stepwise from the side of the substrate to the side of the multilayered thin films therein.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.