Semiconductor-device inspecting apparatus and a method for manufacturing the same
US6496023B1 · kind B1 · utility
7Cited by
9References
12Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 28, 2000 |
| Grant date | Dec 17, 2002 |
| Priority date | — |
| Expiry date | Nov 28, 2020 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S977/874
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A structure is provided such that a plural cantilevers are formed on a first board formed of silicon, probes are respectively formed on the individual cantilevers at positions each offset perpendicularly to a longitudinal center line of the cantilever, and wiring connected continuously from each probe to a secondary electrode pad portion through an insulating layer. A structure is alternatively adopted such that by using a both-ends supported beam formed of silicon as the beam, each probe is formed at a position offset toward a supported portion side of the both-ends supported beam.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.