Patent · US Expired

Method and apparatus for sputter deposition of multilayer films

US6497799B1 · kind B1 · utility

24Cited by
7References
20Claims
0Family size

Assignee

Inventor

Key dates

Filing dateApr 11, 2001
Grant dateDec 24, 2002
Priority date
Expiry dateApr 11, 2021

Classification

  • Technology area (CPC C)Chemistry; Metallurgy
  • CPC primaryC23C14/165
  • WIPO fieldSurface technology, coating
  • WIPO sectorChemistry

Abstract

Apparatus for forming a multilayer film on at least one surface of a substrate comprises a vacuum chamber including:(a) a pair of parallel top and bottom walls connected by a side wall;(b) at least one entry/exit means in the side wall for insertion and withdrawal of a substrate from the chamber;(c) a plurality of spaced-apart, radially extending, linearly elongated sputtering sources arranged in a co-planar array adjacent one of the top or bottom walls of the chamber, each of the linearly elongated sputtering sources having a length and a width; and(d) a gripper/transporter for gripping and moving a substrate in a generally circular, planar path past each of the plurality of radially extending sputtering sources, such that the at least one deposition surface of the substrate faces each of the sputtering sources during movement along the circular path, for deposition of the multilayer film thereon.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.