Structure to inspect high/low of memory cell threshold voltage using current mode sense amplifier
US6498757B2 · kind B2 · utility
9Cited by
13References
5Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 11, 2001 |
| Grant date | Dec 24, 2002 |
| Priority date | — |
| Expiry date | Apr 11, 2021 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2029/5006
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A structure to inspect high/low of memory cell threshold voltage using a current mode sense amplifier. A current mode sense amplifier is used to compare a memory cell current of a selected memory cell and a reference current to determine high/low of the threshold voltage. Since the current input is compared, it is not necessary to provide a reference word line and a reference memory cell circuit. The area is thus decreased, and the waiting time to convert current to voltage is saved to greatly increase the access speed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.