Method for forming a deposited film by plasma chemical vapor deposition
US6500500B1 · kind B1 · utility
Assignee
Inventor
Key dates
| Filing date | Aug 15, 2000 |
| Grant date | Dec 31, 2002 |
| Priority date | — |
| Expiry date | Aug 20, 2020 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/509
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A film-forming method and apparatus by high frequency plasma CVD, characterized by using a specific high frequency power introduction means comprising at least an electrode for introducing a high frequency power into a deposition chamber containing a substrate therein and an insulating member which covers the electrode such that the surface of the electrode is isolated from glow discharge caused in the deposition chamber, the electrode being provided with a plurality of gas ejection holes for ejecting gas against an inner face of the insulating member, wherein the formation of a deposited film on the substrate in the deposition chamber is conducted while ejecting gas (inert gas or hydrogen gas) from the gas ejection holes of the electrode against the inner face of the insulating member.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.