Spin-valve magnetoresistive element and method for making the same
US6500570B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 5, 2000 |
| Grant date | Dec 31, 2002 |
| Priority date | — |
| Expiry date | May 28, 2021 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/1121
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
A spin-valve magnetoresistive element includes an antiferromagnetic layer, a first pinned magnetic layer, a nonmagnetic interlayer, a second pinned magnetic layer, a nonmagnetic conductive layer, a free magnetic layer, a pair of longitudinal biasing layers, and a pair of lead layers. When a detecting current is applied from the lead layers, the magnetization vector of the free magnetic layer is aligned in a direction intersecting the magnetization vector of the second pinned magnetic layer, and the magnetization vector of the second pinned magnetic layer is tilted by an angle &thgr; from the normal of a track width direction toward a direction opposite to a longitudinal biasing magnetic field, in order to reduce asymmetry of the output.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.