Inventor · Niigata, JP

Yosuke Ide

84Patents
12h-index
40Co-inventors
84Inventor score

Filing activity: Oct 3, 2000 → Jan 23, 2023

Most-cited inventions

PatentTitleAreaCited byStatus
US7220499B2 CPP giant magnetoresistive head having antiferromagnetic film disposed in rear of element Emerging Cross-Sectional Technologies 35 Expired
US7466525B2 Magnetic sensing element including laminated film composed of half-metal and NiFe alloy as free layer Electricity 27 Active
US7336453B2 Magnetic sensing element including pinned layer and/or free layer composed of [110] crystal planes-oriented Heusler alloy Emerging Cross-Sectional Technologies 22 Active
US7599155B2 Self-pinned CPP giant magnetoresistive head with antiferromagnetic film absent from current path Physics 19 Expired
US6500570B2 Spin-valve magnetoresistive element and method for making the same Emerging Cross-Sectional Technologies 19 Expired
US6608739B1 Spin valve thin film magnetic element having first and second free magnetic layers having antiparallel magnetization directions Physics 18 Expired
US6764778B2 Thin film magnetic element with accurately controllable track width and method of manufacturing the same Emerging Cross-Sectional Technologies 17 Expired
US7933100B2 Tunneling magnetic sensor including free magnetic layer and magnesium protective layer disposed thereon Electricity 17 Active
US7800867B2 CPP GMR head with antiferromagnetic layer disposed at rear of ferrimagnetic pinned layer Physics 15 Active
US7126797B2 Spin valve magnetoresistive element having pinned magnetic layer composed of epitaxial laminated film having magnetic sublayers and nanomagnetic interlayer Emerging Cross-Sectional Technologies 15 Expired
US7029771B2 Magnetic sensor having free layer additionally provided with magnetic anisotropy by shape anisotropy Emerging Cross-Sectional Technologies 13 Expired
US7310207B2 Magnetic sensing element including magnetic layer composed of Heusler alloy disposed on underlayer having {111}-oriented fcc structure Electricity 12 Expired
US6806804B2 Magnetic detecting element having &bgr;-values selected for free magnetic layer and pinned magnetic layer Physics 12 Expired
US8476899B2 Magnetic sensor and magnetic balance type current sensor including the same Physics 10 Active
US6678128B2 Exchange coupling film and electroresistive sensor using the same Emerging Cross-Sectional Technologies 9 Expired
US7045224B2 Magnetic detecting element having antiferromagnetic film having predetermined space in track width direction and method for manufacturing the same Emerging Cross-Sectional Technologies 8 Expired
US6893734B2 Magnetic sensing element with improved sensitivity and method for making the same Emerging Cross-Sectional Technologies 8 Expired
US8754642B2 Magnetic balance type current sensor Physics 7 Active
US7898776B2 Tunneling magnetic sensing element including enhancing layer having high Fe concentration in the vicinity of barrier layer Electricity 6 Active
US7499249B2 Spin valve-GMR element in which a non-metal laminate layer is provided as a free magnetic layer and method of manufacturing the same Emerging Cross-Sectional Technologies 6 Active
US6847508B2 Spin valve thin film magnetic element and thin film magnetic head Electricity 6 Expired
US6856494B2 Spin-valve type thin film magnetic element having bias layers and ferromagnetic layers Physics 6 Expired
US8519704B2 Magnetic-balance-system current sensor Physics 6 Active
US8208231B2 Tunneling magnetic sensing element with insertion magnetic layer inspired into soft magnetic layer Emerging Cross-Sectional Technologies 6 Active
US7480122B2 Magnetic detecting device having free layer or pinned layer formed by lamination of magnetic alloy and Cu layer and method of manufacturing magnetic detecting device Electricity 5 Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.