Process for producing GaN related compound semiconductor
US6500689B2 · kind B2 · utility
39Cited by
14References
7Claims
0Family size
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Key dates
| Filing date | Mar 29, 2001 |
| Grant date | Dec 31, 2002 |
| Priority date | — |
| Expiry date | Mar 29, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/825
Abstract
A layer comprising cobalt (Co) is formed on a p+ layer by vapor deposition, and a layer comprising gold (Au) is formed thereon. The two layers are alloyed by a heat treatment to form a light-transmitting electrode. The light-transmitting electrode therefore has reduced contact resistance and improved light transmission properties, and gives a light-emitting pattern which is stable over a long time. Furthermore, since cobalt (Co) is an element having a large work function, satisfactory ohmic properties are obtained.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.