Methods and materials for depositing films on semiconductor substrates
US6500772B2 · kind B2 · utility
26Cited by
7References
8Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 8, 2001 |
| Grant date | Dec 31, 2002 |
| Priority date | — |
| Expiry date | Jan 8, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02274
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of depositing a film on a substrate, comprising placing the substrate in the presence of plasma energy, and contacting the substrate with a reactive gas component comprising a compound of the formula (R—NH)4−nSiXn, wherein R is an alkyl group, n is 1, 2, or 3, and X is selected from hydrogen or the halogens. The reactive gas composition may further comprise an oxidizer and/or a reducing agent.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.