Thomas Ivers
11Patents
9h-index
32Co-inventors
64Inventor score
Filing activity: Jan 14, 1999 → Jan 6, 2006
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6335261B1 | Directional CVD process with optimized etchback | Electricity | 163 | Expired |
| US6252295A | Adhesion of silicon carbide films | Electricity | 34 | Expired |
| US6821890B2 | Method for improving adhesion to copper | Electricity | 29 | Expired |
| US6626188B2 | Method for cleaning and preconditioning a chemical vapor deposition chamber dome | Emerging Cross-Sectional Technologies | 28 | Expired |
| US6500772B2 | Methods and materials for depositing films on semiconductor substrates | Electricity | 26 | Expired |
| US6271595A | Method for improving adhesion to copper | Electricity | 24 | Expired |
| US6737747B2 | Advanced BEOL interconnect structures with low-k PE CVD cap layer and method thereof | Electricity | 23 | Expired |
| US6939797B2 | Advanced BEOL interconnect structures with low-k PE CVD cap layer and method thereof | Electricity | 11 | Expired |
| US7480990B2 | Method of making conductor contacts having enhanced reliability | Emerging Cross-Sectional Technologies | 9 | Active |
| US6726996B2 | Laminated diffusion barrier | Emerging Cross-Sectional Technologies | 6 | Expired |
| US7034400B2 | Dual damascene interconnect structure using low stress fluorosilicate insulator with copper conductors | Electricity | 0 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.