Thin film transistor
US6501095B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 26, 2001 |
| Grant date | Dec 31, 2002 |
| Priority date | — |
| Expiry date | Feb 26, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02691
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention relates to a thin film transistor device, an object of the invention is to realize the thin film transistor device of high mobility by large-grain sizing (quasi single crystal) a low-temperature poly-Si thin film being an elemental material of the thin film transistor in a state trued up to a crystal orientation having the most stable lattice structure in consideration of strain at the interface with a substrate, and by controlling a crystal position.The object described above can be achieved by realizing a high mobility thin film transistor device in a manner forming a channel with crystal grains having large grain size and controlled crystal orientations by paying attention to a fact that a {110} surface of IV group crystal (crystal composed of either one or a mixed crystal of them selected from a group of C, Si, Ge, Sn, and Pb) has the smallest dangling bond density, by minimizing strain energy at the substrate interface, and by making crystal growth with selection of crystal orientations having growth lengths equivalent to channel lengths.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.