Shinya Yamaguchi
65Patents
10h-index
66Co-inventors
81Inventor score
Filing activity: Nov 13, 1997 → Dec 20, 2021
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US5926377A | Multilayer printed board | Emerging Cross-Sectional Technologies | 120 | Expired |
| US6501095B2 | Thin film transistor | Electricity | 60 | Expired |
| US6943086B2 | Laser annealing apparatus, TFT device and annealing method of the same | Electricity | 36 | Expired |
| US8294869B2 | Image display | Physics | 30 | Active |
| US6723541B2 | Method of producing semiconductor device and semiconductor substrate | Emerging Cross-Sectional Technologies | 21 | Expired |
| US6756614B2 | Thin film semiconductor device, polycrystalline semiconductor thin film production process and production apparatus | Electricity | 19 | Expired |
| US6713324B2 | Display device and a method for manufacturing the same | Physics | 15 | Expired |
| US7129124B2 | Display device, process of fabricating same, and apparatus for fabricating same | Electricity | 15 | Expired |
| US6949452B2 | Method for fabricating image display device | Physics | 12 | Expired |
| US6903372B1 | Semiconductor device, method of making the same and liquid crystal display device | Electricity | 12 | Expired |
| US7326623B2 | Method of manufacturing display device | Electricity | 7 | Active |
| US6545294B1 | ELECTRONIC APPARATUS HAVING SEMICONDUCTOR DEVICE INCLUDING PLURALITY OF TRANSISTORS FORMED ON A POLYCRYSTALLINE LAYERED STRUCTURE IN WHICH THE NUMBER OF CRYSTAL GRAINS IN EACH POLYCRYSTALLINE LAYER IS GRADUALLY REDUCED FROM LOWER TO UPPER LAYER | Electricity | 7 | Expired |
| US5940310A | Device, method and storage medium for calculating electromagnetic field strength | Physics | 7 | Expired |
| US7192852B2 | Method for fabricating image display device | Physics | 6 | Expired |
| US7666769B2 | Method for fabricating image display device | Physics | 6 | Active |
| US6872977B2 | Thin film semiconductor device, production process and information displays | Electricity | 6 | Expired |
| US7834353B2 | Method of manufacturing display device | Electricity | 6 | Active |
| US6847069B2 | Thin-film semiconductor device, manufacturing method of the same and image display apparatus | Electricity | 5 | Expired |
| US10801904B2 | Sensor chip, flexure element, and force sensor device | Physics | 5 | Active |
| US6521909B2 | Thin film semiconductor device containing polycrystalline Si-Ge alloy and method for producing thereof | Emerging Cross-Sectional Technologies | 5 | Expired |
| US10634695B2 | Force sensor | Physics | 5 | Active |
| US7172932B2 | Thin film semiconductor device, polycrystalline semiconductor thin film production process and production apparatus | Electricity | 5 | Expired |
| US7791695B2 | Liquid crystal display device | Physics | 5 | Active |
| US6903368B2 | Thin-film transistor device, its manufacturing process, and image display using the device | Electricity | 4 | Expired |
| US7859016B2 | Thin film semiconductor device, polycrystalline semiconductor thin film production process and production apparatus | Electricity | 4 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.