Transistor structures
US6501140B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 28, 2001 |
| Grant date | Dec 31, 2002 |
| Priority date | — |
| Expiry date | Nov 28, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/038
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The invention encompasses a method of forming an insulative material along a conductive structure. A conductive structure is provided over a substrate, and an electrically insulative material is formed along at least a portion of the conductive structure. The electrically insulative material comprises at least one of SixOyNz and AlpOq, wherein p, q, x, y and z are greater than 0 and less than 10. A dopant barrier layer is formed over the electrically insulative material. BPSG is formed over the dopant barrier layer, and the dopant barrier layer prevents dopant migration from the BPSG to the electrically insulative material. The invention also encompasses transistor structures, and methods of forming transistor structures.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.