Trench isolation for semiconductor device with lateral projections above substrate
US6501148B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 20, 1999 |
| Grant date | Dec 31, 2002 |
| Priority date | — |
| Expiry date | Dec 20, 2019 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S148/05
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes a semiconductor substrate in which a trench for element isolation is formed, and an element isolation oxide film buried into the trench in such a manner that the element isolation oxide film is projected from the surface of the semiconductor substrate. The element isolation oxide film which is an element isolation insulating film for defining an element forming region on the semiconductor substrate has a projection portion above the surface of the semiconductor substrate. The projection portion has the width wider than that of the trench. The projection portion and a contact portion made in contact with the semiconductor substrate within the trench are made of thermal oxide films, and a portion other than the projection portion and the contact portion is made of a CVD dioxide film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.