Advanced lateral PNP by implant negation
US6501152B1 · kind B1 · utility
11Cited by
4References
5Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Aug 10, 1999 |
| Grant date | Dec 31, 2002 |
| Priority date | — |
| Expiry date | Aug 10, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/401
Abstract
A lateral NPN transistor (LPNP) (102) having the lightly doped drain extension implant blocked from the emitter region (118) but not the collector region (120). Accordingly, the emitter region (118) has a more abrupt junction for high emitter injection efficiency while the collector region (120) has a lightly doped region for reduced base depletion.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.