Patent · US Expired

Silicon carbide composites and methods for making same

US6503572B1 · kind B1 · utility

21Cited by
29References
33Claims
0Family size

Assignee

Inventors

Key dates

Filing dateJul 21, 2000
Grant dateJan 7, 2003
Priority date
Expiry dateJul 21, 2020

Classification

  • Technology area (CPC Y)Emerging Cross-Sectional Technologies
  • CPC primaryY10T428/252
  • WIPO fieldMaterials, metallurgy
  • WIPO sectorChemistry

Abstract

Improved silicon carbide composites made by an infiltration process feature a metal phase in addition to any residual silicon phase. Not only are properties such as mechanical toughness improved, but the infiltrant can be so engineered as to have much diminished amounts of expansion upon solidification, thereby enhancing net-shape-making capabilities. Further, multi-component infiltrant materials may have a lower liquidus temperature than pure silicon, thereby providing the practitioner greater control over the infiltration process. In particular, the infiltration may be conducted at the lower temperatures, where low-cost but effective bedding or barrier materials can terminate the infiltration process once the infiltrant has migrated through the permeable mass up to the boundary between the mass and the bedding material.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.