Group III-V compound semiconductor and method of producing the same
US6503610B2 · kind B2 · utility
82Cited by
3References
7Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 23, 2001 |
| Grant date | Jan 7, 2003 |
| Priority date | — |
| Expiry date | Mar 23, 2021 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/24926
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Provided is a method of producing a group III-V compound semiconductor having a low dislocation density without increasing the thickness of a re-grown layer, the method includes a re-growing process using a mask pattern, and threading dislocations in the re-grown layer are terminated by the voids formed on the pattern.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.