Method of fabricating isolation structure for semiconductor device
US6503802B2 · kind B2 · utility
4Cited by
3References
16Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Nov 29, 2001 |
| Grant date | Jan 7, 2003 |
| Priority date | — |
| Expiry date | Nov 29, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/26586
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of fabricating an isolation structure for a semiconductor device is provided. The method includes the steps of forming a trench in a semiconductor substrate, implanting oxidation-accelerating ions into corner portions of the semiconductor substrate, forming an oxide film in the trench of the semiconductor substrate, which activates the oxidation-accelerating ions to round the corner portions of the semiconductor substrate, and filling the trench with an insulating material to fabricate the isolation structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.