Process for producing nanoporous dielectric films at high pH
US6503850B1 · kind B1 · utility
15Cited by
2References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 25, 1998 |
| Grant date | Jan 7, 2003 |
| Priority date | — |
| Expiry date | Mar 25, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02282
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention relates to nanoporous dielectric films and to a process for their manufacture. Such films are useful in the production of integrated circuits. A precursor of an alkoxysilane, and low and high volatility solvents are mixed at a pH of about 2-5, raised to a pH of about 8 or above with a low volatility base and deposited on a semiconductor substrate. After exposure to atmospheric moisture, a nanoporous dielectric film is produced on the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.