Tetrahydrofuran-adducted group II &bgr;-diketonate complexes as source reagents for chemical vapor deposition
US6504015B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 22, 2001 |
| Grant date | Jan 7, 2003 |
| Priority date | — |
| Expiry date | Feb 22, 2021 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/409
- WIPO fieldOrganic fine chemistry
- WIPO sectorChemistry
Abstract
Group II metal MOCVD precursor compositions are described having utility for MOCVD of the corresponding Group II metal-containing films. The complexes are Group II metal &bgr;-diketonate adducts of the formula M(&bgr;-diketonate)2(L)4 wherein M is the Group II metal and L is tetrahydrofuran. Such source reagent complexes of barium and strontium are usefully employed in the formation of barium strontium titanate and other Group II thin films on substrates for microelectronic device applications, such as integrated circuits, ferroelectric memories, switches, radiation detectors, thin-film capacitors, microelectromechanical structures (MEMS) and holographic storage media.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.