Power MOSFET device, structures employing the same and methods of fabrication
US6504208B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 27, 2001 |
| Grant date | Jan 7, 2003 |
| Priority date | — |
| Expiry date | Mar 1, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/20
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A semiconductor device, full bridge converter employing the same, and methods of fabrication thereof are provided. The device includes a vertical MOSFET having a parasitic body diode at a junction face between a body region and a semiconductor layer thereof. The parasitic body diode is suppressed by having no direct electrical connection to the body region, resulting in the parasitic body diode being open-circuited within the MOSFET. Co-packaged with the MOSFET is a separate bypass diode connected across a source and a drain of the MOSFET. The bypass diode functions to clamp the voltage across the MOSFET without employing the parasitic, electrically isolated body diode of the MOSFET.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.