Photo-excited gas processing apparatus for semiconductor process
US6506253B2 · kind B2 · utility
490Cited by
20References
20Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Sep 10, 2001 |
| Grant date | Jan 14, 2003 |
| Priority date | — |
| Expiry date | Sep 10, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/32339
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A CVD apparatus includes a process chamber connected to a process chamber through a connection path. A window made of a light transmission material is disposed in a wall that defines the excitation chamber. A light source is disposed outside the excitation chamber to face the window. The light source irradiates a flow of a process gas with light through the window, thereby exciting the process gas. A surface purge system is arranged to supply a purge gas along the inner surface of the window. The surface purge system has a purge gas port open to the excitation chamber.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.