Method of forming a GaInNAs layer
US6506618B1 · kind B1 · utility
1Cited by
1References
16Claims
0Family size
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Key dates
| Filing date | May 20, 2002 |
| Grant date | Jan 14, 2003 |
| Priority date | — |
| Expiry date | May 20, 2022 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/93
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An undoped GaAs layer is formed on a GaAs substrate. Thallium is adhered to the undoped GaAs layer to a thickness of at least one atomic layer. After adhesion of thallium, GaInNAs is epitaxially grown on the undoped GaAs layer by chemical vapor deposition.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.