Method for forming an SOI substrate by use of a plasma ion irradiation
US6506662B2 · kind B2 · utility
7Cited by
20References
15Claims
0Family size
Inventors
Key dates
| Filing date | Feb 9, 2000 |
| Grant date | Jan 14, 2003 |
| Priority date | — |
| Expiry date | Feb 9, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76243
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for forming a silicon on insulator substrate includes the step of dissociating a plasma of molecules including at least any one of oxygen and nitrogen to obtain ions. The ions are accelerated by passage through gaps between acceleration electrodes at a predetermined acceleration energy for irradiation of the accelerated ions onto a silicon substrate which is heated to form an insulation film within the silicon substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.