Method of making a semiconductor device using a silicon carbide hard mask
US6506692B2 · kind B2 · utility
81Cited by
8References
6Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | May 30, 2001 |
| Grant date | Jan 14, 2003 |
| Priority date | — |
| Expiry date | May 30, 2021 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/931
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of converting a hydrophobic surface of a silicon carbide layer to a hydrophilic surface is described. That method comprises forming a silicon carbide containing layer on a substrate, then operating a PECVD reactor to generate a plasma that converts the surface of that layer from a hydrophobic surface to a hydrophilic surface. Also described is a method for making a semiconductor device that employs this technique.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.