Power transistors for radio frequencies

US6507047B2 · kind B2 · utility

Assignee

• Telefonaktiebolaget LM Ericsson (Publ) · SE

Inventor

• Andrej Litwin · Stockholm, SE

Key dates

• Filing date: May 17, 2001
• Grant date: Jan 14, 2003
• Expiry date: May 17, 2021

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/8325

Abstract

A field effect transistor is made on a chip comprising a SiC-substrate. The transistor includes a plurality of densely stacked parallel transistor cells occupying totally a rectangular area. Each transistor cell has parallel strip-shaped regions forming the electrodes and active areas of the cell and each inner cell shares its drain and sources electrodes with neighbouring cells. In order to give a good power dissipation allowing an electrical high power of the transistor, the rectangular area has a very elongated shape and specifically it should have a width not larger than substantially 50 &mgr;m. In the rectangular area all the transistor cells have their strip-shaped regions located in parallel to short sides of the rectangular area and are generally very short considering the length of the rectangular area. Thus specifically also each cell has a length not larger than substantially 50 &mgr;m. The distances from the long sides of the rectangular area to the edges of the chip should be at least 50% and preferably 60% of the thickness of the chip to allow a good thermal flow out of the active rectangular area. A plurality of such very elongated active areas can be located on a si…