Fuse area structure having guard ring surrounding fuse opening in semiconductor device and method of forming the same
US6507086B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 17, 2000 |
| Grant date | Jan 14, 2003 |
| Priority date | — |
| Expiry date | Nov 17, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/998
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A fuse area structure in a semiconductor device and a method of forming the same are provided. A ring-shaped guard ring which surrounds a fuse opening, for preventing moisture from seeping into the side surface of the exposed fuse opening, is included. The guard ring is integrally formed with a passivation film. In order to form the guard ring, a guard ring opening etching stop film is formed on a fuse line. A guard ring opening is formed using the etching stop film, and a contact hole is formed in a peripheral circuit. A conductive material layer for forming an upper interconnection layer is formed on the entire surface of a resultant structure on which the contact hole and the guard ring opening are formed. The conductive material layer formed on the guard ring opening is removed. The exposed etching stop film is removed. Finally, a passivation film is deposited on the entire surface of the resulting structure. Accordingly, the guard ring formed of the passivation film filling the guard ring opening is formed. It is possible to form the guard ring without an additional process, to thus effectively prevent moisture from seeping into interfaces between interlayer dielectric films. …
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.